Naxin Micro provides a full scenario GaN driver IC solution

2024-05-06

For the current popular third-generation semiconductor technology, GaN has broad application scenarios in markets such as data centers, photovoltaics, energy storage, and electric vehicles. Compared with traditional Si devices, GaN has higher switching frequency and smaller switching losses, but it also puts higher requirements on the design of driving ICs and driving circuits. According to the differences in gate characteristics, GaN is divided into two types: normally open depletion mode (D-mode) and normally closed enhancement mode (E-mode); According to the differences in application scenarios, GaN requires multiple driving methods such as isolation or non isolation, low edge or bootstrap, zero voltage or negative pressure shutdown, etc. For different types of GaN and various application scenarios, Nanochip Micro has launched a series of driving IC solutions to help fully leverage the performance advantages of GaN devices.